Differences in Samsung NAND Flash Series
K9F Series (SLC)
Structure: SLC (Single-Level Cell)
Access Cycles: SLC can handle approximately 100,000 write cycles, which is about 10 times more than MLC, which can handle around 10,000 write cycles. This count refers to data write cycles, not the total number of read and write operations. Data read operations do affect flash lifespan, but not as critically as write operations.
Speed: SLC technology, being older, benefits from highly mature control chip technology, offering faster read, write, and erase speeds compared to MLC.
Power Consumption: SLC uses only 1.8V due to its binary state (high and low). It is more power-efficient compared to MLC, which requires at least 3.3V due to its multi-level state (4 levels for 2 bits per cell).
Error Rate: SLC's binary state (0 or 1) results in fewer errors and greater stability. Even if a cell fails, overall performance remains largely unaffected, as the cell functions like a simple switch with only on or off states.
Manufacturing Cost: SLC NAND Flash is generally more expensive to manufacture compared to MLC due to its lower density and higher cost per cell.
K9G Series (MLC)
Structure: MLC (Multi-Level Cell)
Access Cycles: MLC can handle fewer write cycles (around 10,000) compared to SLC.
Speed: MLC's read, write, and erase speeds are generally slower than SLC, partly due to the more complex control required to handle multiple states.
Power Consumption: MLC requires higher voltage (3.3V and above) due to the need to differentiate between multiple states (4 levels for 2 bits per cell).
Error Rate: MLC technology involves four different states per cell, requiring precise control of cell charging voltage and longer charging times to ensure data reliability. Errors in MLC can lead to more significant data corruption compared to SLC.
Manufacturing Cost: MLC is cheaper to produce than SLC, as it can store more bits per cell (2 or more bits), reducing the cost per unit of storage without increasing the physical size of the storage device.
